发明名称 |
METHOD OF EVALUATING THE UNIFORMITY OF THE THICKNESS OF THE POLYSILICON GATE LAYER |
摘要 |
A method of evaluating the uniformity of the thickness of the polysilicon gate layer is provided. A substrate having a dense trenches area and a sparse trenches area is provided. A plurality of first trench isolation structures are formed in the sparse trenches area of the substrate and a plurality of second trench isolation structures are simultaneously formed in the dense trenches area of the substrate. A mask layer is formed between the gaps of the first and the second trench isolation structures. A portion of the first trench isolation structures of the sparse trenches area is then removed. Then, the mask layer is removed until the surface of the substrate is exposed. A polysilicon gate layer is formed over the substrate. Finally, a planarization process is performed to remove a portion of the polysilicon gate layer. |
申请公布号 |
US2008113485(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20060559410 |
申请日期 |
2006.11.14 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
WANG TA-JEN;TSAI YUAN-CHEN;TUNG SHIH-JAN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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