METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE

摘要

A method for manufacturing a non-volatile memory device is provided to prevent deterioration of characteristics by preventing damage of source/drain regions. A tunnel insulating layer(210) is formed on a substrate(200). A charge trap layer(240) including a charge trap element is formed on the tunnel insulating layer. A blocking insulating layer(250) is formed on the charge trap layer. A gate electrode(260) is formed on the blocking insulating layer. The blocking insulating layer is etched in a first manner by using the gate electrode as an etch mask. The exposed charge trap layer and the tunnel insulating layer are etched in a second manner. The charge trap element is composed of nano metal particles.