发明名称 CAPACITOR, METHOD OF PRODUCING SAME, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a capacitor which has a high unit capacitance and also has a large breakdown withstand voltage at a low leakage current density. <P>SOLUTION: The capacitor includes a first electrode 2, a dielectric layer 3, and a second electrode 4 that are sequentially stacked. The dielectric layer 3 has a stacked layer structure including hafnium oxide sublayers and tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the tantalum oxide sublayers to the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008112956(A) 申请公布日期 2008.05.15
申请号 JP20070013811 申请日期 2007.01.24
申请人 SONY CORP 发明人 ADACHI KEN;HORIUCHI SATOSHI
分类号 H01L21/822;H01L21/316;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01L21/822
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