MASK ETCH PLASMA REACTOR WITH BACKSIDE OPTICAL SENSOR AND MULTIPLE FREQUENCY CONTROL OF ETCH DISTRIBUTION

摘要

PROBLEM TO BE SOLVED: To provide a plasma reactor having multiple frequency control of etch parameters.

SOLUTION: The reactor includes a reactor chamber 1104 and a workpiece support 1103 within the chamber, the chamber having a ceiling 1108 facing the workpiece support, and an inductively coupled source power applicator 1114 and a capacitively coupled plasma source power applicator 1116. An array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors are coupled to the output ends of the optical fibers. The reactor further includes a controller, responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator 1114 and the capacitively coupled plasma source power applicator 1116.

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