PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A second conductor pattern is connected to the sidewall of the first conductor pattern to form a diode. A phase change layer is electrically connected to the second conductor pattern and a top electrode is connected to the phase change layer.