| 摘要 |
A method for manufacturing a passivation layer of a transflective TFT substrate is provided to prevent an organic insulating layer from being remained within a contact whole by using a mold including first and second protrusion units having different thicknesses, thereby preventing contact faults between a drain electrode and a reflection electrode. On a TFT(Thin Film Transistor) where an inorganic insulating layer(130) is formed, liquefied organic insulating material is formed. According as the liquefied organic insulating material is pressed by using a mold(150) for imprint having first and second protrusion units(152,156) having different thicknesses, a passivation layer, a contact hole and a through hole are formed. After that, the passivation layer is hardened. The contact hole is formed on an area corresponding to the first protrusion unit when pressing the organic insulating material by the mold. The through hole is formed on an area corresponding to the second protrusion unit when pressing the organic insulating material by the mold. |
