发明名称 |
METHOD FOR ETCHING SINGLE-CRYSTAL SEMICONDUCTOR SELECTIVE TO AMORPHOUS/POLYCRYSTALLINE SEMICONDUCTOR AND STRUCTURE FORMED BY SAME |
摘要 |
A method of forming a vertical DRAM device. A lower trench is filled with polycrystalline or amorphous semiconductor for a capacitor. An upper trench portion has exposed sidewalls of single-crystal semiconductor. The method then includes etching the single-crystal semiconductor sidewalls to widen the of the upper trench portion beyond the exposed upper surface of the semiconductor fill of the capacitor to form exposed regions of single-crystal semiconductor on a bottom portion of the upper trench adjacent to the exposed upper surface of the semiconductor fill. A trench top insulating layer is deposited on the bottom portion of the upper trench, over the upper surface of the semiconductor fill and over the adjacent regions of single-crystal semiconductor. The method then includes forming a vertical gate dielectric layer, wherein the trench top insulating layer extends below the vertical gate insulating layer.
|
申请公布号 |
US2008111175(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20060558974 |
申请日期 |
2006.11.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HENRY RICHARD O.;SETTLEMYER KENNETH T. |
分类号 |
H01L27/108;H01L21/306;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|