| 摘要 |
When an isolation insulating film is formed, first, by thermal oxidation method, a silicon oxide film having a thickness of about 5 nm is formed. Next, a silicon nitride film having a thickness of about 3 nm to about 20 nm is formed. The silicon oxide film and the silicon nitride film serve as a liner film. When the silicon nitride film is formed, BTBAS is used as a growth gas, and NH<SUB>3 </SUB>gas is also supplied. As for conditions, the temperature of the substrate is set to be 600° C. or lower, the pressure inside the chamber is set to be 200 Pa or lower, and the flow rate of BTBAS and NH<SUB>3 </SUB>(NH<SUB>3</SUB>/BTBAS) is set to be 0.1 to 30. After forming the silicon nitride film, the silicon oxide film is formed by a high density plasma method. Then, it is flattened using a CMP method or the like.
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