Verfahren zur Herstellung einer Halbleiter-Dünnschicht

摘要

#CMT# #/CMT# The method involves implanting a semiconductor plate with a dose of ions to fragilize the plate at level of a reference plane, where fragilization is insufficient to obtain separation during heat processing step. The plate is separated into a thin layer (6) and a remaining mass (7) on sides of the plane by applying mechanical forces between the two parts. The plate is contacted and integrated, before the separation step, with an applicator (8) so as to assure, between the applicator and a head face (2), a binding energy sufficient for resisting to the application of mechanical forces. #CMT#USE : #/CMT# Used for fabricating a thin semiconductor layer from a semiconductor plate (claimed). #CMT#ADVANTAGE : #/CMT# The fragilization of the plate is insufficient to obtain separation during the heat processing so that the formation of blister on the head face is avoided. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a step of separation of plate. 2 : Head face 5 : Electronic components 6 : Thin layer 7 : Remaining mass 8 : Applicator #CMT#INORGANIC CHEMISTRY : #/CMT# The semiconductor plate is made of silicon or monocrystalline silicon.