发明名称 |
LIGHT EMITTING DIODE ELEMENT, AND LIGHT EMITTING DIODE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode element for improving light take-out efficiency and having high light emitting efficiency by forming a cover layer wherein the change of an antireflection effect by the heat generation of a light emitting diode chip is small without the need of microfabrication to a substrate and the light emitting diode chip or an optical member for converging light, and to provide a light emitting diode device using it. <P>SOLUTION: In the light emitting diode element comprising the light emitting diode chip and the cover layer formed on the surface, the cover layer is provided with an antireflection function to light emitted from the light emitting diode chip, the thickness is ≤50 μm and the absolute value of the temperature coefficient of a refractive index is ≤15×10<SP>-6</SP>/°C. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008112959(A) |
申请公布日期 |
2008.05.15 |
申请号 |
JP20070030370 |
申请日期 |
2007.02.09 |
申请人 |
NIPPON ELECTRIC GLASS CO LTD |
发明人 |
SAKAMOTO AKIHIKO;SETO SUNAO;HIMEI HIROSUKE |
分类号 |
H01L33/12;H01L33/44;H01L33/48 |
主分类号 |
H01L33/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|