| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED chip exhibiting excellent luminous output power and suitably employed as the pumping light source of white light emitting device for lighting. <P>SOLUTION: The GaN-based LED chip 10 has such a structure as a GaN-based semiconductor layer L is formed on a translucent substrate 11. The GaN-based semiconductor layer L has a multilayer structure including an n-type layer 12, a light emitting layer 13, and a p-type layer 14 in this order from the translucent substrate 11 side. The n-type layer 12 is exposed partially by removing a part of the p-type layer 14 and the light emitting layer 13 from the GaN-based semiconductor layer L by etching, and a negative electrode 15 is formed on the exposed surface. A translucent electrode 16 of amorphous oxide semiconductor is formed on the p-type layer 14 as a positive electrode. A metal reflective film 17 is formed on the translucent electrode 16. The translucent electrode 16 may be formed of an oxide semiconductor film having a surface flattened by polishing in place of an amorphous oxide semiconductor. <P>COPYRIGHT: (C)2008,JPO&INPIT |
