发明名称 |
Nonvolatile memory devices, methods of operating the same and methods of forming the same |
摘要 |
A nonvolatile memory (NVM) device includes a floating gate on a semiconductor substrate and a gate insulating layer between the semiconductor substrate and the floating gate. A tunnel insulating layer is disposed between the semiconductor substrate and the floating gate. The tunnel insulating layer is thinner than the gate insulating layer. A first inter-gate insulating layer is disposed on the floating gate, and a sensing gate is disposed on the first inter-gate insulating layer. The sensing gate covers a first portion of the floating gate. A control gate is disposed to cover a top surface and a sidewall of a second portion of the floating gate. A second inter-gate insulating layer is disposed between the control gate and the sensing gate and between the control gate and the floating gate. Operation methods and fabrication methods of the NVM device are also provided.
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申请公布号 |
US2008111181(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20070982036 |
申请日期 |
2007.11.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WEON-HO;HAN JEONG-UK;KIM YONG-TAE |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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