| 摘要 |
A method of forming a semiconductor device can include forming a first layer of semiconductor material in contact with a first area of a substrate. The first area can be adjacent to at least one electrical isolation structure that extends into the substrate and has a top portion extending above a surface of the substrate. The method can also include etching, with a degree of anisotropy, the first layer to form at least a first structure in contact with the first area. Further, in a step separate from the etching step, retention of residual semiconductor material at a junction of the substrate and the at least one electrical isolation structure can be prevented. |
