| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable complementary thin film transistor circuit operating stably by preventing variation in characteristics between a first conductivity type thin film transistor and a second conductivity type thin film transistor. SOLUTION: The complementary thin film transistor circuit comprises first conductivity type thin film transistors and second conductivity type thin film transistors formed of single-crystal grains at a plurality of starting points provided on the insulating surface of a substrate substantially as centers. The first conductivity type thin film transistors and the second conductivity type thin film transistors are formed, arranging the direction of drain current, and at least the channel regions of the first conductivity type thin film transistors and the second conductivity type thin film transistors are formed in the single-crystal grain having an identical plane orientation. COPYRIGHT: (C)2008,JPO&INPIT
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