FILM FORMING METHOD, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a film forming method and a substrate processing apparatus for effectively forming a barrier layer including a high quality Ti film even under a low temperature and forming also a TiSixfilm, in a self-aligning manner, in an interface region between the Ti film and an underlayer thereof. SOLUTION: In the step of forming the TiSixfilm 507, a first step for introducing a titanium compound gas into a processing chamber so that the Si surface of the Si substrate 502 adsorbs the same titanium compound gas, a second step for suspending introduction of the titanium compound gas into the processing chamber and eliminating the titanium compound gas left within the processing chamber, and a third step for reduction of the titanium compound gas adsorbed by the Si surface to form the TiSixfilm 507 through reaction with silicon at the Si surface by producing plasma within the processing chamber while introducing hydrogen gas into the processing chamber, are repeatedly carried out several times without introducing argon gas into the processing chamber. COPYRIGHT: (C)2008,JPO&INPIT