| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage that can provide a memory mixedly mounted logic LSI at low cost, allows a charge holding film to capture an electron easily in write operation, and can perform the write operation speedily, and to provide a method of manufacturing the semiconductor storage. SOLUTION: A portion 105a of the charge holding film 105 is arranged at the lower portion of both the ends of a gate electrode 103. A lower region 105a-1 of the portion 105a in the charge holding film 105 is positioned at a side lower than the surface of a semiconductor substrate 101 directly below the center of the gate electrode 103. In the semiconductor storage, simply by adding one mask for covering a non-oxidizable film to a region other than a memory region to a logic process, a memory element can be mixedly mounted on the logic memory, thus providing the memory mixedly mounted logic LSI at low cost. COPYRIGHT: (C)2008,JPO&INPIT
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