METHOD OF FORMING HIGH DIELECTRIC FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a high dielectric film in which a hydrogen-containing component hardly remains in the film even in a low-temperature film deposition condition using an organic metal material. SOLUTION: The method has a step of forming a high dielectric film using an organic metal material on a substrate 1 at≤350°C using an ALD or CVD method, and a step of irradiating the high dielectric film with an ultraviolet ray in a low-pressure oxygen-containing atmosphere to desorb the hydrogen in the film. COPYRIGHT: (C)2008,JPO&INPIT