| 摘要 |
PROBLEM TO BE SOLVED: To reduce the occurrence of write error when reading data from a memory device. SOLUTION: The semiconductor storage comprises: a memory cell array 4; a R/W control circuit 5; and a reference resistance circuit. The memory cell array 4 stores and holds data in a plurality of magnetoresistive elements connected to a word line WLy (y=0, 1, ..., 2n, 2n+1, ...), and a bit line BLix, and a source line SLix (i=0, 1, ..., m, ..., M; x=0, 1). The R/W control circuit 5 controls voltage applied to the bit line BLix and source line SLix. The reference resistance circuit generates a prescribed reference resistance value. The R/W control circuit 5 performs control so that voltages Vout_B0, Vout_B1 applied to the reference resistance circuit are increased when the value of resistance in the magnetoresistive element is the maximum resistance value Rmax when reading data from the memory cell array 4, and reduces voltages Vout0, Vout1 applied to the magnetoresistive element. COPYRIGHT: (C)2008,JPO&INPIT
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