发明名称 ION FLOW CONTROL TYPE PLASMA SOURCE AND INDUCTION FULLERENE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma source that enables to extract a low-energy high-current plasma flow suitable for manufacturing induction fullerenes, and a manufacturing method that allows large-quantity synthesis of induction fullerenes. <P>SOLUTION: A plasma generation part in a plasma source capable of controlling ion energy is composed of a metal plate 2, a heater 1, and a heater heating power source 6. A space potential setting electrode 3, an electron reflecting electrode 4, and an electron supplying electrode 5 are arranged in parallel with each other while being arranged almost parallel to the metal plate 2. A plasma generation power source 7 is connected between the metal plate 2 and the space potential setting electrode 3 while a voltage is applied between them so as to make the side of the space potential setting electrode 3 have a higher potential. With respect to a ground potential, a positive voltage is applied to the space potential setting electrode 3 by a power source 8, a negative voltage is applied to the electron reflecting electrode 4 by a power source 9, and a current is supplied to the electron supplying electrode 5 by a power source 10 so as to allow the electrode 5 to generate heat. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008112580(A) 申请公布日期 2008.05.15
申请号 JP20060271980 申请日期 2006.10.03
申请人 IDEAL STAR INC;JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 HATAKEYAMA RIKIZO;KANEKO TOSHIRO;TAKAHASHI KAZUKI;KASAMA YASUHIKO;OMOTE KENJI
分类号 H05H1/24;C01B31/02 主分类号 H05H1/24
代理机构 代理人
主权项
地址