SEMICONDUCTOR CAPACITIVE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor capacitive element in which a capacitance per unit area is large, and the manufacture variations in the capacitance is small, and a Q value is high, and a self-resonant frequency is high. SOLUTION: Each of a first wiring layer and a second wiring layer includes a wire group on an input side and a wire group on an output side. A lead-out wire included in the wire group on the input side in the first wiring layer and a lead-out wire included in the wire group on the input side in the second wiring layer are disposed so as to overlap with each other when viewed from a direction of lamination of the wiring layers. A lead-out wire included in the wire group on the output side in the first wiring layer and a lead-out wire included in the wire group on the output side in the second wiring layer are disposed so as to overlap with each other when viewed from the direction of lamination of the wiring layers. The wires which generate capacitances three-dimensionally intersect with each other when viewed from the direction of lamination of the wiring layers. COPYRIGHT: (C)2008,JPO&INPIT