| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics in a semiconductor device having a high-frequency LSI. SOLUTION: The semiconductor device comprises: a semiconductor chip that is applied to, for example, a WCSP (wafer level chip size package) and has a high-frequency circuit block; a plurality of electrode pads formed on the semiconductor chip; a post arranged between the high-frequency circuit block and the electrode pad in a horizontal surface for connecting to an external terminal; a rewiring layer connecting the electrode pad to the post. COPYRIGHT: (C)2008,JPO&INPIT
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