BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To increase a current amplification factor by elevating an energy barrier at the end of a valence band to holes in an emitter-base junction section and inhibiting the recombination-current component of a base current by forming the emitter-base junction section having few defects regarding a bipolar transistor and a manufacturing method for the bipolar transistor. SOLUTION: The bipolar transistor has a collector layer consisting of an Si element, a base layer consisting of the elements of Si, Ge and C and an emitter layer containing SiCx (x represents the composition ratio of the element of C) consisting of the elements of Si and C. x=0 holds in the SiCx of the emitter layer on an interface between the emitter layer and the base layer. The value of x of SiCx in the emitter layer increases in the direction towards the emitter layer from the interface between the emitter layer and the base layer. COPYRIGHT: (C)2008,JPO&INPIT