| 摘要 |
PROBLEM TO BE SOLVED: To provide organometallic compounds useful for a chemical vapor deposition of thin films and an atomic layer deposition. SOLUTION: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds. COPYRIGHT: (C)2008,JPO&INPIT |
