发明名称 |
FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES |
摘要 |
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.
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申请公布号 |
US2008111202(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20080013622 |
申请日期 |
2008.01.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
DYER THOMAS W.;FANG SUNFEI;YAN JIANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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