| 摘要 |
A plasma deposition system, a PECVD system and an operating method of the same, and a substrate producing method using the same are provided to control radicals in a plasma processing system by forming a radical shield around an antenna. A substrate supporting unit(120) is positioned in an inside of a process chamber(105). The substrate supporting unit is formed to support a substrate on which a layer is deposited. An antenna(110) is positioned in the inside the process chamber. A containment shield(145) is formed to surround partially the antenna. The containment shield has an inner space. A supporting gas inlet(155) is formed to supply a support gas to the inner space of the containment shield. A precursor gas inlet is formed to supply a precursor gas to the inside of the process chamber. At least one opening is formed in the containment shield.
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