SILICON CARBIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

This invention provides a silicon carbide semiconductor device having exc ellent operating characteristics and a process for producing the same. A cov ering film (M1) formed of silicon is formed on an initial grown layer (11) p rovided on a 4H-SiC substrate (10), and an enlarged terrace face (15A) is fo rmed on an area covered with the covering film (M1). Next, the covering film (M1) is removed, and a newly grown layer is epitaxially grown on the initia l grown layer (11). In this case, a 3C-SiC part (21a) formed of a 3C-SiC cry stal of a polytype having low-temperature stability is grown on the enlarged terrace face (15A) in the initial grown layer (11). The provision of a chan nel region such as MOSFET in the 3C-SiC part (21a) having a small bandgap ca n improve the channel mobility as a result of a reduction in interfacial lev el and thus can realize the production of a silicon carbide semiconductor de vice having excellent operating characteristics.