PLASMA ETCHING APPARATUS AND METHOD

摘要

An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.