| 摘要 |
A method and an apparatus for manufacturing a semiconductor single crystal, and a semiconductor single crystal ingot are provided to manufacture wafers at various oxygen concentration conditions by controlling an oxygen concentration with respect to a specific length and a specific position of the single crystal ingot. A crystal crucible(10) contains semiconductor melt. A crucible support(20) is coupled with an outer periphery of the crucible to support the crucible. A heater(40) is arranged to enclose a sidewall of the crucible support and provides convection heat on the semiconductor melt. The heater, the crucible support, and the crucible are received in a hollow portion of a heat insulator(50), which is arranged, such that an inner sidewall of the hollow portion is mated with an outer periphery of the heater. Magnetic field application units(M1,M2) are arranged around the crystal crucible and apply a Cusp-type asymmetrical magnetic field on the crystal crucible. A single crystal ingot elevator(60) contacts a seed crystal on a surface of the semiconductor melt and raises the seed crystal, while the seed crystal is rotated in a predetermined direction. A crucible rotator(30) rotates the crucible support in the predetermined direction and raises the crucible support, such that a solid-liquid interface is maintained at a constant level. An oxygen concentration, which is introduced into the single crystal, is controlled by controlling a relative position of the crystal crucible with respect to the magnetic field application units, an asymmetrical degree of the magnetic field, and a combination thereof.
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