| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device preventing internal separation or damage in a protective film and each wiring layer near the periphery of an external connection electrode region or a scribe line region by an assembly process, such as bonding and sealing. <P>SOLUTION: A metal layer 4 in a multilayer structure comprising at least one wiring layer and at least one via is formed near the plurality of conventional external connection electrodes 3 and near the scribe line region 2 on a semiconductor element region 1 simultaneously through a normal wiring process. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
