| 摘要 |
An electro-optic device manufacturing method comprises providing a first partition on a substrate in a form of a pattern; depositing a metal material onto the substrate, forming a pixel electrode and a signal line on a top surface of the first partition, and forming a gate wire in an area surrounded by the first partition; after depositing, forming a second partition that partitions at least the a gate insulator formation area and a semiconductor layer formation area of which a section overlaps with the gate insulator formation area on the substrate; discharging functional liquid including a formation material for forming an insulator layer in the gate insulator formation area and forming a gate insulator; and after forming the gate insulator, discharging a functional liquid including a formation material for forming an organic semiconductor layer onto the semiconductor formation area and forming an organic semiconductor layer that crosses over the gate electrode and a section of the gate insulator and electrically connects the pixel electrode and the signal line.
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