VACUUM END EFFECTOR FOR HANDLING HIGHLY SHAPED SUBSTRATES

摘要

The present teachings relate to a system for handling semiconductor substrates with end effector devices. In one embodiment a plurality of orifices situated on a robot end effector are used to manipulate a highly shaped semiconductor wafer or substrate. The orifices may create vacuum forces on the substrate to enable the handling of the substrate. An end effector may have one or more primary orifices and may have one or more additional secondary orifices. The one or more primary orifices may be controllable and may have a high vacuum flow, greater than about 1 ft³/min.