发明名称 |
Verfahren zur Herstellung von Solarzellen aus amorphem Silizium mittels Naßätzen von Löchern oder Gräben durch Rückseitenelektroden und amorphes Silizium |
摘要 |
A method of amorphous silicon solar cell manufacture comprises forming thin films of transparent electrode, amorphous silicon, and backside electrode, in that order, on a transparent substrate. An alkali resistant metal is used For the backside electrode. The backside electrode and the amorphous silicon layer are wet-etched, thereby opening holes or grooves that penetrate through these layers. |
申请公布号 |
DE4230338(B4) |
申请公布日期 |
2008.05.15 |
申请号 |
DE19924230338 |
申请日期 |
1992.09.10 |
申请人 |
SANYO ELECTRIC CO. LTD. |
发明人 |
MIZUMURA, TAKAYUKI;SAWADA, KENJI;KOJIMA, NAOKI;KAWANISHI, YASUYOSHI;OTSUKI, MASATOSHI |
分类号 |
H01L31/0392;H01L27/142;H01L31/0224;H01L31/06;H01L31/18;H01L31/20 |
主分类号 |
H01L31/0392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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