GaN SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Provided is a GaN semiconductor light emitting element, which has an active layer having a quantum well structure containing In, suppresses thermal damage due to growing temperature of a semiconductor layer grown after growing the active layer, takes more In and has improved light emitting characteristics and electrical characteristics. On a sapphire substrate (1), an n-type GaN contact layer (2), an n-type AlInGaN/AlGaN superlattice layer (3), an active layer (4), a p-type AlGaN block layer (8) and a p-type GaN contact layer (5) are laminated, and an n-electrode (7) and a p-electrode (6) are arranged. The active layer (4) has a quantum well structure wherein a well layer satisfies the inequalities of Al<SUB>X1</SUB>In<SUB>Y1</SUB>Ga<SUB>Z1</SUB>N(X1+Y1+Z1=1, 0<X1<1, 0<Y1<1), and a barrier layer satisfies the inequalities of Al<SUB>X2</SUB>In<SUB>Y2</SUB>Ga<SUB>Z2</SUB>N(X2+Y2+Z2=1, 0=X2<1, 0=Y2<1, Y1>Y2). The well layer and the barrier layer are formed by temperature modulation.