| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for endpoint detection for photomask etching. <P>SOLUTION: The apparatus is equipped with a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching is achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
