| 摘要 |
PROBLEM TO BE SOLVED: To suppress electromigration of a Cu ion from copper wiring to an insulating film. SOLUTION: This semiconductor device is provided with a first copper conductor 33, a second conductor 30 located at a potential lower than that of the first copper conductor, a first insulating film 31 located between the first copper conductor 33 and the second conductor 30, and a second insulating film 32 of which the film thickness and resistivity are smaller than those of a first insulating film 31 between the first copper conductor 33 and the first insulating film 31. The resistivity of the second insulating film 32 is preferably 1/10 or less of the resistivity of the first insulating film 31. COPYRIGHT: (C)2008,JPO&INPIT
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