Protection structure for semiconductor sensor i.e. ion-sensitive field-effect transistor sensor, has insulating layer arranged between semiconducting layer and metallic layer, and electrically insulating semiconducting and metallic layers

摘要

The protection structure (100) has a metallic layer and a semiconducting layer, which is attached on a semiconductor substrate (110). An insulating layer is arranged between the semiconducting layer and the metallic layer, and electrically insulates the semiconducting layer and the metallic layer. The metallic layer has a side, which is turned away from the insulating layer for bringing the side over a protective layer or directly in contact with a measuring medium (130). The protective layer has an oxide layer.