GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY

摘要

A Group Ill-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group Ill-nitride semiconductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group Ill-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group Ill-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 °C, the Group Ill-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10<SUP>7</SUP> cm<SUP>-2</SUP>.