| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect type transistor by using a semiconductor material capable of forming a superfine pattern with a simple process. SOLUTION: In the field effect type transistor, a polythiophene-based polymer, which has a functional group performing an addition reaction by photodimerization on a side chain, is used for a semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT
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