| 摘要 |
This disclosure concerns a semiconductor memory device comprising a semiconductor substrate; a buried insulating film provided on the semiconductor substrate; a semiconductor layer provided on the buried insulating film; an N-type source layer formed in the semiconductor layer; an N-type drain layer formed in the semiconductor layer; a body region formed in the semiconductor layer to be provided between the source layer and the drain layer, the body region being in an electrically floating state and holding data according to a state of accumulating majority carriers in the body region; a gate insulating film provided on the body region; a gate electrode provided on the gate insulating film; and a P-type diffusion layer provided on a surface of the semiconductor substrate present under the drain layer, wherein a conduction type of a surface of the semiconductor substrate present under the body region is an N type.
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