Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same

摘要

A method and assembly for sensing a voltage with a memory cell ( 88 ) is provided. The memory cell includes first and second electrodes ( 96,112 ), first and second ferromagnetic bodies ( 104,108 ) positioned between the first and second electrodes and an insulating body ( 94 ) positioned between the first and second ferromagnetic bodies. The first electrode is electrically connected to a first portion of a microelectronic assembly ( 47 ). The second electrode is electrically connected to a second portion of the microelectronic assembly. The voltage across the first and second portions of the microelectronic assembly is determined based on an electrical resistance of the memory cell. The memory cell may be a magnetoresistive random access memory (MRAM) cell. In one embodiment, the memory cell is a magnetic tunnel junction (MTJ) memory cell.