发明名称 PIXEL STRUCTURE AND FABRICATING METHOD THEREOF
摘要 A pixel structure including a substrate, a gate, a patterned dielectric layer, a semiconductor layer, a source, a drain and a reflective pixel electrode is provided. The gate is disposed on the substrate, whereon the patterned dielectric layer is disposed to cover the gate. The patterned dielectric layer has a plurality of bumps and at least one opening; the bumps are disposed on the substrate exposed by the opening and the semiconductor layer is disposed on the patterned dielectric layer above the gate. The source and the drain are disposed on the semiconductor layer. The reflective pixel electrode is disposed on the patterned dielectric layer to cover the bumps and electrically connected with the drain. Hence, the pixel structure can achieve better reliability.
申请公布号 US2008111935(A1) 申请公布日期 2008.05.15
申请号 US20070675639 申请日期 2007.02.16
申请人 发明人 LEE YI-WEI;CHU CHING-YUN;HUANG TZUFONG
分类号 G02F1/136;H01L21/84 主分类号 G02F1/136
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