A NANOSCALE, HIGHLY SELECTIVE, THERMALLY RESILIENT CARBON ETCH-STOP

摘要

A method for forming an etch- stop layer and a resulting structure fabricated therefrom. The etch-stop layer is a silicon-germanium layer having a ratio of silicon to germanium of about 50:1 or less, a boron layer formed within the silicon-germanium layer where the boron layer has a full-width half-maximum (FWHM) thickness value of less than 50 nanometers, and a carbon layer formed within the silicon-germanium layer where the carbon layer has an FWHM thickness value of less than 50 nanometers. A ratio of boron to carbon in the etch-stop layer is in a range of about 0.5 to 1.5.