发明名称 BAND-GAP BIAS CONTROLLING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THE SAME
摘要 A band-gap bias controlling circuit and a semiconductor integrated circuit including the same are provided to stabilize a bias voltage at high speed by controlling the switching of a voltage level forming a node using a band-gap voltage. A band-gap bias controlling circuit includes first and second nodes(N1,N2), first and second voltage generators(110,120), and a switching unit(130). The first voltage generator generates a positive bias voltage to the first node according to a sleep mode signal. The second voltage generator generates a negative bias voltage to the second node according to the sleep mode signal. The switching unit switches the first and second nodes according to the sleep mode signal and a band-gap voltage.
申请公布号 KR100829456(B1) 申请公布日期 2008.05.15
申请号 KR20070022960 申请日期 2007.03.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HYUNG SOO;PARK, KUN WOO;KIM, YONG JU;KIM, JONG WOON;SONG, HEE WOONG;OH, IC SU;HWANG, TAE JIN
分类号 G05F1/56 主分类号 G05F1/56
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