发明名称 |
BAND-GAP BIAS CONTROLLING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THE SAME |
摘要 |
A band-gap bias controlling circuit and a semiconductor integrated circuit including the same are provided to stabilize a bias voltage at high speed by controlling the switching of a voltage level forming a node using a band-gap voltage. A band-gap bias controlling circuit includes first and second nodes(N1,N2), first and second voltage generators(110,120), and a switching unit(130). The first voltage generator generates a positive bias voltage to the first node according to a sleep mode signal. The second voltage generator generates a negative bias voltage to the second node according to the sleep mode signal. The switching unit switches the first and second nodes according to the sleep mode signal and a band-gap voltage. |
申请公布号 |
KR100829456(B1) |
申请公布日期 |
2008.05.15 |
申请号 |
KR20070022960 |
申请日期 |
2007.03.08 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HYUNG SOO;PARK, KUN WOO;KIM, YONG JU;KIM, JONG WOON;SONG, HEE WOONG;OH, IC SU;HWANG, TAE JIN |
分类号 |
G05F1/56 |
主分类号 |
G05F1/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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