| 发明名称 |
INTERLAYER INSULATING FILM, WIRING STRUCTURE, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE INTERLAYER INSULATING FILM, THE WIRING STRUCTURE AND THE ELECTRONIC DEVICE |
| 摘要 |
<p>A wiring structure of a semiconductor device or the like is provided with an interlayer insulating film having a fluorocarbon film formed on a base layer, and a conductor formed by being embedded in the interlayer insulating film. The fluorocarbon film includes nitrogen, has a low dielectric constant, is formed with excellent repeatability, and is stable.</p> |
| 申请公布号 |
WO2008056748(A1) |
申请公布日期 |
2008.05.15 |
| 申请号 |
WO2007JP71734 |
申请日期 |
2007.11.08 |
| 申请人 |
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;OHMI, TADAHIRO;YASUDA, SEIJI;INOKUCHI, ATSUTOSHI;MATSUOKA, TAKAAKI;KAWAMURA, KOHEI |
发明人 |
OHMI, TADAHIRO;YASUDA, SEIJI;INOKUCHI, ATSUTOSHI;MATSUOKA, TAKAAKI;KAWAMURA, KOHEI |
| 分类号 |
H01L21/312;H01L21/768;H01L23/522 |
主分类号 |
H01L21/312 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
