发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device of the present invention is provided including the steps of forming a first conductive layer over a substrate; forming a second conductive layer containing a conductive particle and resin over the first conductive layer; and increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam. By including the step of laser beam irradiation, the portion where the first conductive layer and the second conductive layer are in contact with each other can be increased and defective electrical connection between the first conductive layer and the second conductive layer can be improved. |
申请公布号 |
EP1920459(A1) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20060768415 |
申请日期 |
2006.07.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAHASHI, HIDEKAZU;SUGIYAMA, EIJI |
分类号 |
H01L21/3205;H01L21/683;H01L23/485;H01L27/12 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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