发明名称 |
Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
摘要 |
<p>There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate; and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, in a manner that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.</p> |
申请公布号 |
EP1921682(A2) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20070020917 |
申请日期 |
2007.10.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ITO, ATSUO;AKIYAMA, SHOJI;KAWAI, MAKOTO;TANAKA, KOICHI;TOBISAKA, YUUJI;KUBOTA, YOSHIHIRO |
分类号 |
H01L31/0392;H01L21/762;H01L31/0224;H01L31/068;H01L31/18 |
主分类号 |
H01L31/0392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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