METHOD FOR FORMING CHANNEL SILICON LAYER AND METHOD FOR MANUFACTURING STACKED SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a channel silicon layer and a method for manufacturing a stack type semiconductor device are provided to improve operation performance of the transistor formed on a channel silicon film by improving a thickness uniformity of the channel silicon film. A first single crystal silicon film(110) having a protruded portion is formed on an upper surface of a single crystal silicon substrate. A passivation film(112) is formed on the upper surface of the first single crystal silicon film. The first single crystal silicon film and the passivation film are primarily polished, such that a portion of the first single crystal silicon film and a portion of the passivation film are removed from the exposed portion and a second single crystal silicon film and a passivation film pattern are formed. The passivation film pattern is removed. The second single crystal silicon film is polished to form a channel silicon film.