发明名称 |
ACTIVE MATRIX DISPLAYS AND METHOD OF MAKING |
摘要 |
<p>Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.</p> |
申请公布号 |
EP0898785(B1) |
申请公布日期 |
2008.05.14 |
申请号 |
EP19970917014 |
申请日期 |
1997.03.26 |
申请人 |
HYUNDAI ELECTRONICS AMERICA |
发明人 |
HOLMBERG, SCOTT, H.;RAJESH, SWAMINATHAN |
分类号 |
G09F9/30;H01L21/84;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/44;H01L21/77;H01L23/48;H01L23/52;H01L29/04;H01L29/40;H01L29/786;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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