发明名称 SUBSTRATE, SEMICONDUCTOR DEVICE USING THE SAME, METHOD FOR INSPECTING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A substrate, a semiconductor device using the same, a method for inspecting the semiconductor device, and a method for manufacturing the semiconductor device are provided to reduce a mounting area, signal wiring capacity, and noise by improving a structure thereof. A substrate including at least one semiconductor stacked circuit is formed in a substrate stacked through an insulating layer. The substrate includes a first electrode terminal(13) connected to the semiconductor stacked circuit, a second electrode terminal(14) connected to a terminal of an upper substrate arranged on an upper layer of the substrate, and a third electrode terminal(15) positioned at an outside of an extension of the upper substrate in a part of outer circumferences of the first and second electrode terminals.
申请公布号 KR20080041999(A) 申请公布日期 2008.05.14
申请号 KR20070112537 申请日期 2007.11.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 IWAMURA HIROKI;OZAWA NAOTO;HIRAI HIROSHI
分类号 H01L23/48 主分类号 H01L23/48
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