METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME AND METHOD OF FORMING A METAL-CONTAINING THIN FILM

摘要

A compound having good thermal stability and appropriate vaporization characteristic as a raw material of CVD method or ALD method, its production method, a thin film formed using the compound as a raw material, and its formation method are provided. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) and a compound represented by the general formula (3), and a metal-containing thin film is formed using the same as a raw material.
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[Chem. 3] M p (NR 4 R 5 ) q €ƒ€ƒ€ƒ€ƒ€ƒ(3)
(In the formulae, M represents a Group 4 atom, an aluminum atom, a gallium atom or the like; n is 2 or 3 in some cases, R 1 and R 3 represent an alkyl group having from 1 to 6 carbon atoms, or the like; R 2 represents an alkyl group having from 1 to 6 carbon atoms, or the like; R 4 and R 5 represent an alkyl group having from 1 to 4 carbon atoms, or the like; X represents a hydrogen atom, a lithium atom or a sodium atom; p is 1 or 2 in some cases; and q is 4 or 6 in some cases).